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HP10N60

JINGJIAZHEN
Part Number HP10N60
Manufacturer JINGJIAZHEN
Description 600V N-Channel MOSFET
Published Aug 2, 2016
Detailed Description HF10N60 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Cha...
Datasheet PDF File HP10N60 PDF File

HP10N60
HP10N60

Overview
HF10N60 Electrical Characteristics TC=25 °C unless otherwise specified Symbol Parameter Test Conditions Min On Characteristics VGS RDS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID = 250 ㎂ VGS = 10 V, ID = 4.
75 A 2.
5 -- Off Characteristics BVDSS ΔBVDSS /ΔTJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 ㎂ ID = 250 ㎂, Referenced to25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ----- -- Dynamic Characteristics Ciss Input Capacitance Cos...


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