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IRFW710S

Fairchild Semiconductor
Part Number IRFW710S
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 3, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 IRFW710S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Cap...
Datasheet PDF File IRFW710S PDF File

IRFW710S
IRFW710S

Overview
$GYDQFHG 3RZHU 026)(7 IRFW710S FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 400V ♦ Low RDS(ON): 2.
815Ω (Typ.
) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds BVDSS = 400 V RDS(on) = 3.
6Ω ID = 2 A D2-PAK I2-PAK 2 1 3 1 2 3 1.
Gate 2.
Drain 3.
Source Value 400 2 1.
3 6 ±30 114 2 3.
6 4.
0 3.
1 36 0.
29...


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