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IRFR430

Fairchild Semiconductor
Part Number IRFR430
Manufacturer Fairchild Semiconductor
Description Power MOSFET
Published Aug 4, 2016
Detailed Description $GYDQFHG 3RZHU 026)(7 IRFR430 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capa...
Datasheet PDF File IRFR430 PDF File

IRFR430
IRFR430

Overview
$GYDQFHG 3RZHU 026)(7 IRFR430 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 500V ♦ Lower RDS(ON): 1.
169Ω (Typ.
) BVDSS = 500 V RDS(on) = 1.
5Ω ID = 3.
5 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed (1) Gate-to-Source Voltage Single Pulsed Avalanche Energy (2) Avalanche Current (1) Repetitive Avalanche Energy (1) Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Total Power Dissipation (TC=25°C) Linear Derating Factor (3) Operating Junction and Storage Temperature Range Maximum Lead Temp.
for Soldering Purposes, 1/8 from case for 5-seconds 1.
Gate 2.
Drain 3.
Source Value 500 3.
5 2.
2 14 ±30 340 3.
5 4.
8 3.
5 2.
5 4...


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