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IRFR4105Z

INCHANGE
Part Number IRFR4105Z
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 13, 2020
Detailed Description isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤24.5mΩ ·En...
Datasheet PDF File IRFR4105Z PDF File

IRFR4105Z
IRFR4105Z

Overview
isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105Z ·FEATURES ·Static drain-source on-resistance: RDS(on)≤24.
5mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 55 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 48 Tj Max.
Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance Rth(j-a) Channel-to-ambient thermal resistance MAX 3.
12 110 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IRFR4105Z, IIRFR4105Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITION...


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