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IRFS830A

Inchange Semiconductor
Part Number IRFS830A
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
Published Aug 10, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS830A FEATURES ·Avalanche Rugged T...
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IRFS830A
IRFS830A

Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS830A FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Technology ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 ±30 V V 3.
1 A 18 A 38 W -55~150 -55~150 ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 3.
31 62.
5 UNIT ℃/W ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
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cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFS830A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.
25mA VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current VSD Forward On-Voltage VDS= VGS; ID= 0.
25mA VGS= 10V; ID= 1.
55A VGS= ±20V;VDS= 0 VDS= 500V; VGS= 0 VDS= 400V; VGS= 0; Tj= 125℃ IS= 3.
1A; VGS= 0 MIN MAX UNIT 500 V 24V 1.
5 Ω ±100 nA 10 100 μA 1.
4 V · isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn ...


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