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KSD288

Part Number	KSD288
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 10, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD288 DESCRIPTION ·Collector-Base B...
Datasheet	KSD288 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD288 DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 80V(Min) ·Collector Current- IC= 3A ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ APPLICATIONS ·Power regulator ·Low frequency high power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 55 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon ...

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