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MMBR571L

Inchange Semiconductor
Part Number MMBR571L
Manufacturer Inchange Semiconductor
Description Silicon NPN RF Transistor
Published Aug 10, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR571L DESCRIPTION ·Low Noise ·Hig...
Datasheet PDF File MMBR571L PDF File

MMBR571L
MMBR571L

Overview
INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR571L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product fT = 8.
0 GHz TYP.
@ IC= 50 mA ·High Gain GNF = 16.
5 dB TYP.
@ IC= 10mA, f = 0.
5 GHz APPLICATIONS ·Designed for low noise , wide dynamic range front-end amplifiers and low-noise VCO’S.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature Tstg Storage Temperature Range 3V 80 mA 0.
33 W 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification MMBR571L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 10 V V(BR)CBO Collector-B...


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