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MMBR931L

Part Number	MMBR931L
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Aug 10, 2016
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L DESCRIPTION ·Low Noise Figure NF = 4.3 dB TYP. @VCE = 1 ...
Datasheet	MMBR931L PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L DESCRIPTION ·Low Noise Figure NF = 4.
3 dB TYP.
@VCE = 1 V, IE = 0.
25 mA, f = 1 GHz ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed primarily for use in low-power amplifiers to 1.
0 GHz ,Ideal for pagers and other battery operated systems where power consumption is critical.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 10 V VCEO Collector-Emitter Voltage 5 V VEBO Emitter-Base Voltage 2 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 5 mA 0.
15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR931L ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Coll...

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