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MMBR941L

Part Number	MMBR941L
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Aug 10, 2016
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Prod...
Datasheet	MMBR941L PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor MMBR941L DESCRIPTION ·Low Noise ·High Current-Gain Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high gain , low noise small-signal amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC= 75℃ TJ Junction Temperature 50 mA 0.
25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered tra...

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