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HVV0405-175

HVVi
Part Number HVV0405-175
Manufacturer HVVi
Description Power Transistor
Published Aug 11, 2016
Detailed Description The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness TM UHF Pulsed Power Transistor 400-500 M...
Datasheet PDF File HVV0405-175 PDF File

HVV0405-175
HVV0405-175

Overview
The innovative Semiconductor Company! HVV0405-175 High Voltage, High Ruggedness TM UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the UHF band including weather and long range radar applications.
MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN EFFICIENCY IRL (mA) (W) (dB) (%) (dB) Class AB 450 50 50 175 25 55 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 300μs and pulse period = 3ms.
DESCRIPTION The high power HVV0405-175 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the UHF-Band from 420MHz to 480MHz.
The high voltage HVVFET™ technology produces over 175W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply.
The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION Device Part Number: HVV0405-175 Demo Kit Part Number: HVV0405-175-EK Available through Richardson Electronics (http://rfwireless.
rell.
com/) HVVi Semiconductors, Inc.
10235 S.
51st St.
Suite 100 Phoenix, AZ.
85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.
hvvi.
com © 2008 HVVi Semiconductors, Inc.
All Rights Reserved.
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