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HVV0912-150

HVVi
Part Number HVV0912-150
Manufacturer HVVi
Description Power Transistor
Published Aug 11, 2016
Detailed Description The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transist...
Datasheet PDF File HVV0912-150 PDF File

HVV0912-150
HVV0912-150

Overview
The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN EFFICIENCY IRL (mA) (W) (dB) (%) (dB) Class AB 1215 50 50 150 20 43 -5 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 100μs.
VSWR 20:1 DESCRIPTION The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed app...


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