DatasheetsPDF.com

HVV1011-035

ASI
Part Number HVV1011-035
Manufacturer ASI
Description RF transistor
Published Aug 11, 2016
Detailed Description DESCRIPTION The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-ba...
Datasheet PDF File HVV1011-035 PDF File

HVV1011-035
HVV1011-035

Overview
DESCRIPTION The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating at frequencies of 1030 MHz and 1090 MHz.
PACKAGE FEATURES High Power Gain Excellent Ruggedness 50V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 95 -10, 10 2 116 -65 to +150 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol Parameter 1 JC Thermal Resistance Max 1.
5 Unit °C/W The device resides in the SM200 surface mount package with a ceramic lid.
RUGGEDNESS The HVV1011-035 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR at rated output power over all phase angles and operating voltage across the frequency band of operation.
Symbol LMT1 Parameter Load Mismatch Tolerance Test Condition POUT = 35W F = 1090 MHz Max 20:1 Units...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)