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HVV1011-300

HVVi
Part Number HVV1011-300
Manufacturer HVVi
Description Power Transistor
Published Aug 11, 2016
Detailed Description The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transist...
Datasheet PDF File HVV1011-300 PDF File

HVV1011-300
HVV1011-300

Overview
The innovative Semiconductor Company! HVV1011-300 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50µs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including IFF, TCAS and Mode-S applications.
MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN (mA) (W) (dB) η IRL (%) (dB) Class AB 1400 50 100 120 20 45 -8 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 50µs and pulse period = 1ms.
VSWR 20:1 DESCRIPTION The high power HVV1011-300 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1030MHz to 109...


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