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HVV1214-025S

HVVi
Part Number HVV1214-025S
Manufacturer HVVi
Description RF Transistor
Published Aug 11, 2016
Detailed Description HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Comp...
Datasheet PDF File HVV1214-025S PDF File

HVV1214-025S
HVV1214-025S

Overview
HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The innovative Semiconductor Company! DESCRIPTION The high power HVV1214-25 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.
2 GHz to 1.
4 GHz.
FEATURES • High Power Gain • Excellent Ruggedness • 48V Supply Voltage ABSOLUTE MAXIMUM RATINGS Symbol VDSS VGS IDSX PD2 TS TJ Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Storage Temperature Junction Temperature Value 105 10 2 116 -65 to +200 200 Unit V V A W °C °C THERMAL CHARACTERISTICS Symbol Parameter θJC1 Thermal Resistance Max 1.
5 Unit °C/W PACKAGE The device resides in a Surface Mount Transistor Package with a ceramic lid.
The SMT package style is qualified for gross leak test – MIL-STD-750D, Method 1071.
6, Test Condition C.
RUGGEDNESS The HVV1214-25 device is capable of withstanding an output loa...


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