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HVV1214-100

HVVi
Part Number HVV1214-100
Manufacturer HVVi
Description Power Transistor
Published Aug 11, 2016
Detailed Description The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor ...
Datasheet PDF File HVV1214-100 PDF File

HVV1214-100
HVV1214-100

Overview
The innovative Semiconductor Company! HVV1214-100 High Voltage, High Ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
MODE FREQUENCY (MHz) VDD (V) IDQ Power GAIN (mA) (W) (dB) η IRL VSWR (%) (dB) Class AB 1400 50 100 120 20 45 -8 20:1 Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 200µs and pulse period = 2ms.
DESCRIPTION The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz.
The high voltage HVVFET™ technology produces over 100W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50V supply.
The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
ORDERING INFORMATION Device Part Number: HVV1214-100 Demo Kit Part Number: HVV1214-100-EK Available through Richardson Electronics (http://rfwireless.
rell.
com/) HVVi Semiconductors, Inc.
10235 S.
51st St.
Suite 100 Phoenix, AZ.
85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.
hvvi.
com © 2008 HVVi Semiconductors, Inc.
All Rights Reserved.
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