DatasheetsPDF.com

KSD5703

Inchange Semiconductor
Part Number KSD5703
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 11, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5703 DESCRIPTION ·High Breakdown ...
Datasheet PDF File KSD5703 PDF File

KSD5703
KSD5703

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5703 DESCRIPTION ·High Breakdown Voltage- ：VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6V IC Collector Current- Continuous 10 A IC Collector Current- Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5703 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 1.
6A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 1.
6A ICES Collector Cutoff C...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)