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MBR1065

Inchange Semiconductor
Part Number MBR1065
Manufacturer Inchange Semiconductor
Description Schottky Barrier Rectifier
Published Aug 11, 2016
Detailed Description INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR1065 FEATURES ·Low Forward Voltage ·170℃ Op...
Datasheet PDF File MBR1065 PDF File

MBR1065
MBR1065


Overview
INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBR1065 FEATURES ·Low Forward Voltage ·170℃ Operating Junction Temperature ·Low Power Loss/High Efficiency ·High Surge Capacity APPLICATIONS ·Power supply- output rectification ·Power management ·Instrumentation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 65 IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 133℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 5 150 TJ Junction Temperature 170 V A A ℃ Tstg Storage Temperature Range -50~170 ℃ isc website:www.
iscsemi.
cn 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient Product Specification MBR1065 MAX 2.
0 60 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 5A ; TC= 25℃ IR Maximum Instantaneous Reverse Current VR= 65V, TC= 25℃ 0.
76 V 20 μA isc website:www.
iscsemi.
cn 2 ...



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