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IRF1405LPbF

International Rectifier
Part Number IRF1405LPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 11, 2016
Detailed Description Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynami...
Datasheet PDF File IRF1405LPbF PDF File

IRF1405LPbF
IRF1405LPbF

Overview
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy‡ Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance RθJC RθJA Parameter Junction-to-Case Junction-to-Ambient (PCB mount)ˆ www.
irf.
com G PD-95331A IRF1405SPbF IRF1405LPbF HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 5.
3mΩ S ID = 131A† D2Pak IRF1405SPbF TO-262 IRF1405LPbF Max.
131† 93† 680 200 1.
3 ± 20 590 See Fig.
12a, 12b, 15, 16 5.
0 -55 to + 175 300 (1.
6mm from case ) 10 lbf•in (1.
1N•m) Units A W W/°C V mJ A mJ V/ns °C Typ.
––– ––– Max.
0.
75 40 Units °C/W 1 07/14/10 IRF1405S/LPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current IGSS Qg Qgs Qgd td(on) tr td(off) tf Gate-to-S...


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