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BUL58B

Inchange Semiconductor
Part Number BUL58B
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 12, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B DESCRIPTION ·Collector–Emitte...
Datasheet PDF File BUL58B PDF File

BUL58B
BUL58B

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 100V(Min.
) ·Collector Saturation Voltage : VCE(sat) = 0.
2V(Max) @ IC= 1A ·High Speed Switching APPLICATIONS ·Designed for use in electronic ballast applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 250 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 12 A ICM Collector Current-peak 17 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature Tstg Storage Temperature Range 4A 50 W 150 ℃ -55~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL58B ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.
1A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.
3A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.
6A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 0.
3A VBE(sat)-2 Base-Emitter Saturation Voltage IC= 6A; IB= 0.
6A ICEO ICBO IEBO hFE-1 Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain VCE= 80V; IB= 0 VCB= 250V; IE= 0 VCB= 250V; IE= 0, TC= 125℃ VEB= 9V; IC= 0 VEB= 9V; IC= 0, TC= 125℃ IC= 0.
3A; VCE= 4V hFE-2 DC Current Gain IC= 3A; VCE= 4V hFE-3 DC Current Gain IC= 5A; VCE= 1V COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= 0.
2A; VCE= 4V MIN TYP.
MAX UNIT 100 V 250 V 10 V 0.
2 V 0.
6 V 1.
5 V 1.
1 V 1.
4 V 100 μA 10 100 μA 10 100 μA 30 80 ...


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