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BUL58D

Inchange Semiconductor
Part Number BUL58D
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 12, 2016
Detailed Description INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification BUL58D DESCRIPTION ·High Voltage Capability ...
Datasheet PDF File BUL58D PDF File

BUL58D
BUL58D

Overview
INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification BUL58D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Integrated Antiparallel Collector-Emitter Diode APPLICATIONS ·Electronic ballasts for fluorescent lighting ·Electronic transformers for halogen lamps ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage 800 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9V IC Collector Current 8A ICM Collector Peak Current 16 A IB Base Current 4A IBM Base Peak Current PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature 8A 85 W 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX UNIT 1.
47 ℃/W 62.
5 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Sustaining Voltage IC= 100mA ; L= 25 mH V(BR)EBO Emitter-Base Breakdown Voltage IEB= 10mA; IC=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.
8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 1 A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 4A; IB= 0.
8A VBE(sat)-2 Base-Emitter Saturation Voltage ICES Collector Cutoff Current ICEO Collector Emitter Current IC= 5A; IB= 1 A VCE= 800V; VBE = 0 Tj=125℃ VCE= 450V; IB= 0 hFE-1 DC Current Gain IC= 5A ; VCE= 5V hFE-2 DC Current Gain IC= 0.
5A ; VCE= 5V VF Diode Forward Voltage IF= 3A Switching Times ts Storage Time tf Fall Time ts Storage Time tf Fall Time IC = 2 A ,IB1 = 0.
4 A VBE(off) = -5 V, RBB = 0 Ω VCL = 250 V, L = 200 mH IC = 2 A; IB1 = 0.
4 A VBE(off) = -5 V;RBB = 0Ω VCL = 250 V; L = 200 mH Tj = 125℃ Product Specification BUL58D MIN TYP MAX UNIT 450 V 9V 1.
5 V ...


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