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BUX66B

Inchange Semiconductor
Part Number BUX66B
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 12, 2016
Detailed Description isc Silicon PNP Power Transistors BUX66B/C DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35...
Datasheet PDF File BUX66B PDF File

BUX66B
BUX66B

Overview
isc Silicon PNP Power Transistors BUX66B/C DESCRIPTION ·Contunuous Collector Current-IC= -2A ·Power Dissipation-PD= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage- : VCE(sat)= -2.
5V(Max)@ IC = -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switching regulators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage BUX66B BUX66C VCEO Collector-Emitter Voltage BUX66B BUX66C VEBO Emitter-Base Voltage IC Collector Current-Continuous...


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