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NJG1812ME4

New Japan Radio
Part Number NJG1812ME4
Manufacturer New Japan Radio
Description HIGH POWER DPDT SWITCH GaAs MMIC
Published Aug 14, 2016
Detailed Description NJG1812ME4 HIGH POWER DPDT SWITCH GaAs MMIC  GENERAL DESCRIPTION The NJG1812ME4 is a GaAs DPDT switch MMIC suitable f...
Datasheet PDF File NJG1812ME4 PDF File

NJG1812ME4
NJG1812ME4

Overview
NJG1812ME4 HIGH POWER DPDT SWITCH GaAs MMIC  GENERAL DESCRIPTION The NJG1812ME4 is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications.
The NJG1812ME4 features very low insertion loss, low distortion and excellent linearity performance down to 1.
8V 1bit control voltage at high frequency up to 3GHz.
In addition, this switch is able to handle high power signals.
The NJG1812ME4 has ESD protection devices to achieve excellent ESD performances.
No DC Blocking capacitors are required for all RF ports unless DC is biased externally.
And the small & thin EQFN12-E4 package is adopted.
 PACKAGE OUTLINE NJG1812ME4  APPLICATIONS Antenna swapping, General purpose switching applications LTE, UMTS, CDMA, GSM systems  FEATURES  Low voltage logic control VCTL(H)=1.
35V to 5.
0V  Low voltage operation VDD=2.
7V typ.
 Low insertion loss 0.
25dB typ.
@f=900MHz, PIN=+35dBm 0.
35dB typ.
@f=1900MHz, PIN=+33dBm 0.
45dB typ.
@f=2700MHz, PIN=+27dBm  Low distor...


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