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TIC216D

Inchange Semiconductor
Part Number TIC216D
Manufacturer Inchange Semiconductor
Description Triacs
Published Aug 15, 2016
Detailed Description isc Triacs TIC216D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants ...
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TIC216D
TIC216D

Overview
isc Triacs TIC216D FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 5 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM Repetitive peak off-state voltage VRRM Repetitive peak reverse voltage IT(RMS) RMS on-state current (full sine wave)TC=70℃ ITSM Non-repetitive peak on-state current Tj Operating junction temperature Tstg Storage temperature Rth(j-c) Thermal resistance, junction to case Rth(j-a) Thermal resistance, junction to ambient MIN 400 400 6 60 110 -45~150 2.
5 62.
5 UNIT V V A A ℃ ℃ ℃/W ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ IGT Gate trigger current Ⅰ Ⅱ Ⅲ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅳ IH Holding current VGT Gate trigger voltage Vsupply = 12 V†, IG= 0 initial ITM= 100...


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