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TIC246M

Part Number	TIC246M
Manufacturer	Inchange Semiconductor
Description	Triacs
Published	Aug 15, 2016
Detailed Description	isc Triacs TIC246M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants...
Datasheet	TIC246M PDF File

Overview

isc Triacs TIC246M FEATURES ·With TO-220 package ·Sensitive Gate Triacs ·Glass Passivated ·Max IGT of 50 mA (Quadrants 1~3) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)TC=70℃ 16 A ITSM Non-repetitive peak on-state current 125 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~125 ℃ Rth(j-c) Thermal resistance, junction to case 1.
9 ℃/W Rth(j-a) Thermal resistance, junction to ambient 62.
5 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS TYP.
MAX UNIT IDRM Repetitive peak off-state current VD=VDRM, TC=110℃ Ⅰ IGT Gate trigger current Ⅱ Vsupply = 12 V†; RL= 10Ω; tp(g) >20μs Ⅲ Ⅳ 2.
0 mA 12 50 19 50 mA 16 50 34 IH Holding current Vsup...

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