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CPC5603

IXYS
Part Number CPC5603
Manufacturer IXYS
Description N-Channel FET
Published Aug 15, 2016
Detailed Description INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 415 ...
Datasheet PDF File CPC5603 PDF File

CPC5603
CPC5603

Overview
INTEGRATED CIRCUITS DIVISION Parameter Drain-to-Source Voltage - VDS Max On-Resistance - RDS(on) Max Power Rating 415 14 2.
5 Units V  W Features • 415V Drain-to-Source Voltage • Depletion Mode Device Offers Low RDS(on) at Cold Temperatures • Low On-Resistance: 8 (Typical) @ 25°C • Low VGS(off) Voltage: -2.
0V to -3.
6V • High Input Impedance • Low Input and Output Leakage • Small Package Size SOT-223 • PC Card (PCMCIA) Compatible • PCB Space and Cost Savings Applications • Support Component for LITELINK™ Data Access Arrangement (DAA) • Telecom • Normally-On Switches • Ignition Modules • Converters • Security • Power Supplies CPC5603 N-Channel Depletion Mode FET Description The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process.
The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications, security, and power supplies.
One of the primary applications for the CPC5603 is as a linear regulator/hook switch for the LITELINK™ family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A.
The CPC5603 has a typical on-resistance of 8, a drain-to-source voltage of 415V and is available in the SOT-223 package.
As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
Ordering Information Part # CPC5603CTR Description N-Channel Depletion Mode FET, SOT-223 Pkg.
Tape and Reel (1000/Reel) Package Pinout D 4 123 GDS Pin Number 1 2 3 4 Name GATE DRAIN SOURCE DRAIN DS-CPC5603-R08 www.
ixysic.
com 1 INTEGRATED CIRCUITS DIVISION Absolute Maximum Ratings @ 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Total Package Dissipation Operational Temperature Storage Temperature ...


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