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IXFQ24N60X

IXYS
Part Number IXFQ24N60X
Manufacturer IXYS
Description Power MOSFET
Published Aug 15, 2016
Detailed Description Preliminary Technical Information X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intri...
Datasheet PDF File IXFQ24N60X PDF File

IXFQ24N60X
IXFQ24N60X

Overview
Preliminary Technical Information X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFA24N60X IXFP24N60X IXFQ24N60X IXFH24N60X TO-263 AA (IXFA) VDSS = ID25 = RDS(on) 600V 24A 175m TO-220AB (IXFP) G S D (Tab) GD S TO-3P (IXFQ) D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient 600 V 600 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 24 48 8 500 50 400 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s 300 260 °C °C Mounting Force (TO-263) 10.
.
65 / 2.
2.
.
14.
6 Mounting Torque (TO-220, TO-3P & TO-247) 1.
13 / 10 N/lb Nm/lb.
in TO-263 TO-220 TO-3P TO-247 2.
5 g 3.
0 g 5.
5 g 6.
0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 2.
5mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 © 2015 IXYS CORPORATION, All Rights Reserved Characteristic Values Min.
Typ.
Max.
600 V 2.
5 4.
5 V 100 nA 20 A 750 A 175 m G D S TO-247 (IXFH) D (Tab) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls DS100647B(5/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.
5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Ene...


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