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NTE246

Part Number	NTE246
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Aug 16, 2016
Detailed Description	NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) ...
Datasheet	NTE246 PDF File

Overview

NTE245 (NPN) & NTE246 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE245 (NPN) and NTE246 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in general purpose amplifier applications.
Features: D High DC Current Gain: hFE = 4000 Typ @ IC = 5A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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80V Collector–Base Voltage, VCB .
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80V Emitter–Base Voltage, VEB .
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5V Collector Current, IC .
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10A Base Current, IB .
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200mA Total Power Dissipation (TC = +25°C), PD .
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150W Derate Above 25°C .
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0.
857W/°C Operating Junction Temperature Range, TJ .
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–55° to +200°C Storage Temperature Range, Tstg .
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–55° to +200°C Thermal Resistance, Junction–to–Case, RthJC .
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1.
17°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector–Emitter SustainingVoltage Collector–...

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