DatasheetsPDF.com

NTE250

Part Number	NTE250
Manufacturer	NTE
Description	Silicon Complementary Transistors
Published	Aug 16, 2016
Detailed Description	NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) ...
Datasheet	NTE250 PDF File

Overview

NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.
Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built–In Base–Emitter Shunt Resistors Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
100V Collector–Base Voltage, VCB .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
100V Emitter–Base Voltage, VEB .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
5V Collector Current, IC .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
16A Base Current, IB .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
500mA Total Power Dissipation (TC = +25°C), PD .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
150W Derate Above 25°C .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
0.
857W/°C Operating Junction Temperature Range, TJ .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +200°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +200°C Thermal Resistance, Junction–to–Case, RthJC .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
1.
17°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector–Emitter Breakdown Volta...

Similar Datasheet

NTE20 Silicon Complementary Transistors High Power / Low Collector Saturation Voltage Power Output - NTE
NTE2000 (NTExxxx) Linear Integrated Circuits - NTE Electronics
NTE2001 (NTExxxx) Linear Integrated Circuits - NTE Electronics
NTE2003 Integrated Circuit Dolby B-Type Noise Reduction Processor - NTE
NTE2003 (NTExxxx) Linear Integrated Circuits - NTE Electronics
NTE2004 Integrated Circuit Dolby Noise Reduction Circuit - NTE
NTE2004 (NTExxxx) Linear Integrated Circuits - NTE Electronics
NTE2011 Integrated Circuit 7-Channel Darlington Array/Driver - NTE
NTE2012 Integrated Circuit 7-Channel Darlington Array/Driver - NTE
NTE2013 Integrated Circuit 7-Channel Darlington Array/Driver - NTE

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)