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IXFH50N85X

IXYS
Part Number IXFH50N85X
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFT50N85XHV IXFH50N85X...
Datasheet PDF File IXFH50N85X PDF File

IXFH50N85X
IXFH50N85X

Overview
X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFT50N85XHV IXFH50N85X IXFK50N85X Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-247 & TO-264P) TO-268HV TO-247 TO-264P Maximum Ratings 850 850 V V 30 V 40 V 50 A 125 A 25 A 2J 50 V/ns 890 W -55 .
.
.
+150 150 -55 .
.
.
+150 C C C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 4g 6g 10 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
850 V 3.
...


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