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IXFK50N85X

IXYS
Part Number IXFK50N85X
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFT50N85XHV IXFH50N85X...
Datasheet PDF File IXFK50N85X PDF File

IXFK50N85X
IXFK50N85X

Overview
X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFT50N85XHV IXFH50N85X IXFK50N85X Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-247 & TO-264P) TO-268HV TO-247 TO-264P Maximum Ratings 850 850 V V 30 V 40 V 50 A 125 A 25 A 2J 50 V/ns 890 W -55 .
.
.
+150 150 -55 .
.
.
+150 C C C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in 4g 6g 10 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
850 V 3.
5 5.
5 V 100 nA 50 A 3 mA 105 m VDSS = ID25 = RDS(on) 850V 50A 105m TO-268HV (IXFT) G S D (Tab) TO-247 (IXFH) GDS TO-264P (IXFK) D (Tab) G D S G = Gate S = Source D (Tab) D = Drain Tab = Drain Features  International Standard Packages  High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2016 IXYS CORPORATION, All Rights Reserved DS100704C(6/16) IXFT50N85XHV Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.
5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.
8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.
5...


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