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IXFN120N65X2

IXYS
Part Number IXFN120N65X2
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intr...
Datasheet PDF File IXFN120N65X2 PDF File

IXFN120N65X2
IXFN120N65X2

Overview
Preliminary Technical Information X2-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN120N65X2 D G S S VDSS = ID25 = RDS(on)  650V 108A 24m miniBLOC, SOT-227 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C 50/60 Hz, RMS t = 1 minute IISOL  1mA t = 1 second Mounting Torque Terminal Connection Torque Maximum Ratings 650 650 V V  30 V  40 V 108 A 240 A 15 A 3.
5 J 890 W 50 V/ns -55 .
.
.
+150 150 -55 .
.
.
+150 C C C 2500 3000 V~ V~ 1.
5/13 1.
3/11.
5 Nm/lb.
in Nm/lb.
in 30 g S G G = Gate S = Source S D D = Drain Features  International Standard Package  miniBLOC, with Aluminium Nitride Isolation  Isolation Voltage 2500 V~  High Current Handling Capability  Fast Intrinsic Diode  Avalanche Rated  Low RDS(on) Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 3mA VGS(th) VDS = VGS, ID = 8mA IGSS VGS =  30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 60A, Note 1 Characteristic Values Min.
Typ.
Max.
650 V 3.
5 5.
0 V 100 nA 50 A 5 mA 24 m Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2016 IXYS CORPORATION, All Rights Reserved DS100690B(03/16) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 60A, Note 1 RGi Gate Input Resistance Ciss Coss Crss Co(er) Co(tr) VGS = 0V, VDS = 25V, f = 1MHz Effective Output Capacitance Energy related Time related VVGDSS = = 0V 0.
8 • VDSS td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS Resistive Switching Ti...


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