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IXTA24N65X2

IXYS
Part Number IXTA24N65X2
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description X2-Class Power MOSFET Preliminary Technical Information IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 VDSS = ID25 = RDS(on) 6...
Datasheet PDF File IXTA24N65X2 PDF File

IXTA24N65X2
IXTA24N65X2

Overview
X2-Class Power MOSFET Preliminary Technical Information IXTA24N65X2 IXTP24N65X2 IXTH24N65X2 VDSS = ID25 = RDS(on) 650V 24A 145m N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 650 650 30 40 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 24 48 12 600 50 390 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s 300 260 °C °C Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247) 10.
65 / 2.
2.
.
14.
6 1.
13 / 10 N/lb Nm/lb.
in TO-263 TO-220 TO-247 2.
5 g 3.
0 g 6.
0 g TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) GD S TO-247 (IXTH) D (Tab) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.
5 • ID25, Note 1 Characteristic Values Min.
Typ.
Max.
650 V 3.
0 5.
0 V 100 nA 5 A 100 μA 145 m Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2015 IXYS CORPORATION, All Rights Reserved DS100689A(12/15) IXTA24N65X2 Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.
5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.
8 • VDSS td(on) tr td(off) tf Q...


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