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IXTQ32P20T

IXYS
Part Number IXTQ32P20T
Manufacturer IXYS
Description Power MOSFET
Published Aug 16, 2016
Detailed Description Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P...
Datasheet PDF File IXTQ32P20T PDF File

IXTQ32P20T
IXTQ32P20T

Overview
Preliminary Technical Information TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA32P20T IXTP32P20T IXTQ32P20T IXTH32P20T TO-263 AA (IXTA) TO-220AB (IXTP) VDSS = ID25 = ≤RDS(on) - 200V - 32A 130mΩ TO-3P (IXTQ) G S D (Tab) GD S D (Tab) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient - 200 - 200 + 15 + 25 V V V V TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C - 32 - 96 - 32 1 300 -55 .
.
.
+150 150 -55 .
.
.
+150 A A A J W °C °C °C 1.
6mm (0.
062 in.
) from Case for 10s Plastic body for 10s 300 °C 260 °C Mounting Force (TO-263) 10.
.
65 / 2.
2.
.
14.
6 Mounting Torque (TO-220, TO-247 & TO-3P) 1.
13 / 10 N/lb.
Nm/lb.
in.
TO-263 TO-220 TO-3P TO-247 2.
5 g 3.
0 g 5.
5 g 6.
0 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = -...


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