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CEFF630

Chino-Excel Technology
Part Number CEFF630
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.2A, RDS(ON) = 300mΩ @VGS = 10V. Super high ...
Datasheet PDF File CEFF630 PDF File

CEFF630
CEFF630

Overview
CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 7.
2A, RDS(ON) = 300mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220F full-pak for through hole.
D G D S CEF SERIES TO-220F G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 200 ±20 7.
2 24 35 0.
28 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, ...


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