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CEM4412S1

Chino-Excel Technology
Part Number CEM4412S1
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V , 7A , RDS(ON)=28m Ω @VGS=10V. RD...
Datasheet PDF File CEM4412S1 PDF File

CEM4412S1
CEM4412S1

Overview
CEM4412S1 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V , 7A , RDS(ON)=28m Ω @VGS=10V.
RDS(ON)=42m Ω @VGS=4.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
Surface mount package.
D DDD 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @TJ=125 C -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation PD Operating Junction and Storage 15 Temperature Range TJ, TSTG Limit 30 Ć20 Ć7 Ć30 2.
3 2.
5 -55 to 150 Unit V V A A A W C THERMAL CHARACTERIST...


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