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IXTR170P10P

IXYS
Part Number IXTR170P10P
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR170P10P VDSS = ID25 = ≤RDS(on) -100V -108A 13mΩ ...
Datasheet PDF File IXTR170P10P PDF File

IXTR170P10P
IXTR170P10P

Overview
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR170P10P VDSS = ID25 = ≤RDS(on) -100V -108A 13mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg VISOL TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 50/60 Hz, RMS t = 1 minute IISOL ≤ 1mA t = 1 second 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s Mounting Force Maximum Ratings -100 -100 V V ±20 ±30 -108 - 510 -170 3.
5 V V A A A J 10 V/ns 312 W -55 .
.
.
+150 150 -55 .
.
.
+150 2500 3000 °C °C °C V~ V~ 300 260 20.
.
120 / 4.
5.
.
27 6 °C °C N/lb.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250µA VGS(th) VDS = VGS, ID = -1mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 85A, Note 1 Characteristic Va...


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