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IXTR20P50P

IXYS
Part Number IXTR20P50P
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR20P50P VDSS = ...
Datasheet PDF File IXTR20P50P PDF File

IXTR20P50P
IXTR20P50P

Overview
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR20P50P VDSS = ID25 = ≤RDS(on) - 500V - 13A 490mΩ ISOPLUS247 (IXTR) E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from case for 10s Plastic body for 10s 50/60 Hz, RMS IISOL ≤ 1mA Mounting force Maximum Ratings - 500 - 500 V V ±20 V ±30 V -13 A - 60 A - 20 A 2.
5 J 10 V/ns 190 W -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 t = 1min 2500 t = 1s 3000 20.
.
120 / 4.
5.
.
27 5 °C °C °C °C °C V~ V~ N/lb.
g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = -10V, ID = -10A, Note 1 TJ = 125°C Characteristic Values Min.
Typ.
Max.
- 500 V - 2.
5 - 4.
5 V ±100 nA - 25 μA - 200 μA 490 mΩ Isolated Tab G = Gate D = Drain S = Source Features z Silicon chip on Direct-Copper Bond (DCB) substrate - UL recognized package - Isolated mounting surface - 2500V electrical isolation z Avalanche rated z The rugged PolarPTM process z Low Q G z Low Drain-to-Tab capacitance z Low package inductance - easy to drive and to protect Applications z High side switching z Push-pull amplifiers z DC Choppers z Automatic test equipment z Load-Switch Application z Fuel Injection Systems © 2008 IXYS CORPORATION, All rights reserved DS99983(5/08) Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs VDS = -10V, ID = -10A, Note 1 Ciss Coss Crss VGS = 0V, VDS = - 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = -10V, VDS = 0.
5 • VDSS, ID = -10A RG = 3Ω (External) Qg(on) Qgs Qgd VGS = -10V, VDS = 0.
5 • VDSS, ID = -10A RthJC RthCS Source-Drain...


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