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IXTR90P10P

IXYS
Part Number IXTR90P10P
Manufacturer IXYS
Description Power MOSFET
Published Aug 18, 2016
Detailed Description PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR90P10P D G S VDSS = ID25 RDS(on) = ≤ - 100V - ...
Datasheet PDF File IXTR90P10P PDF File

IXTR90P10P
IXTR90P10P

Overview
PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTR90P10P D G S VDSS = ID25 RDS(on) = ≤ - 100V - 57A 27mΩ ISOPLUS247 E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.
6mm (0.
062 in.
) from Case for 10s Plastic Body for 10s 50/60 HZ , RMS t = 1min Mounting Force Maximum Ratings - 100 - 100 V V ±20 ±30 - 57 - 225 - 90 2.
5 V V A A A J 10 V/ns 190 W -55 .
.
.
+150 150 -55 .
.
.
+150 300 260 2500 20.
.
120/4.
5.
.
27 6 °C °C °C °C °C V~ N/lb.
g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = - 45A, Note 1 Characteristic Values Min.
Typ.
Max.
-100 V...


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