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IXYT80N90C3

IXYS
Part Number IXYT80N90C3
Manufacturer IXYS
Description IGBT
Published Aug 19, 2016
Detailed Description XPTTM 900V IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYT80N90C3 IXYH80N90C3 Symbol VCES VCGR VGES VGEM IIC...
Datasheet PDF File IXYT80N90C3 PDF File

IXYT80N90C3
IXYT80N90C3

Overview
XPTTM 900V IGBT GenX3TM High-Speed IGBT for 20-50 kHz Switching IXYT80N90C3 IXYH80N90C3 Symbol VCES VCGR VGES VGEM IICLR25MS IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TTeC rm=in2a5l°CCur(rCehnitpLCimaiptability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 2 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.
6 mm (0.
062in.
) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 900 V 900 V ±20 V ±30 V 165 A 160 A 80 A 360 A ICM = 160 @VCE VCES 830 A W -55 .
.
.
+175 175 -55 .
.
.
+175 °C °C °C 300 °C 260 °C 1.
13/10 Nm/lb.
in.
4g 6g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 60A, VGE = 15V, Note 1 TJ = 150C Characteristic Values Min.
Typ.
Max.
950 V 3.
5 5.
5 V 25 A 750 A 100 nA 2.
3 2.
7 V 2.
9 V VCES = 900V IC110 = 80A VCE(sat)  2.
7V tfi(typ) = 86ns TO-268 (IXYT) G E C (Tab) TO-247 (IXYH) GCE C (Tab) G = Gate E = Emiiter C = Collector Tab = Collector Features  Optimized for Low Switching Losses  Square RBSOA  Positive Thermal Coefficient of Vce(sat)  International Standard Packages Advantages  High Power Density  Low Gate Drive Requirement Applications  High Frequency Power Inverters  UPS  Motor Drives  SMPS  PFC Circuits  Battery Chargers  Welding Machines  Lamp Ballasts © 2015 IXYS CORPORATION, All Rights Reserved DS100446B(12/15) Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs IC = 60A, VCE = 10V, Note 1 Cies Coes Cres VCE = 25V, VGE = 0V, f = 1MHz Qg(on) Qge Qgc IC = 80A, VGE = 15V, VCE = 0.
5 • VCES td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 25°C IC = 80A, VGE = 15V VCE = 0.
5 • VCES, RG = 2 Note 2 td(on) tri Eon td(off) tfi Eoff Inductive load, TJ = 150...


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