DatasheetsPDF.com

CET451AN

Chino-Excel Technology
Part Number CET451AN
Manufacturer Chino-Excel Technology
Description N-Channel Enhancement Mode Field Effect Transistor
Published Mar 23, 2005
Detailed Description CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.2A, RDS(ON) = 35mΩ @VGS = 10V. RDS(ON) = 50...
Datasheet PDF File CET451AN PDF File

CET451AN
CET451AN

Overview
CET451AN N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.
2A, RDS(ON) = 35mΩ @VGS = 10V.
RDS(ON) = 50mΩ @VGS = 4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D DS D G SOT-223 DS G SOT-223 (J23Z) G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 7.
2 IDM 25 Maximum Power Dissipation PD 3 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 42 Units V V A A W C Units C/W 1998.
March 7 - 46 http://www.
cetsemi.
com CET451AN Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Le...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)