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C2655

Part Number	C2655
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Aug 22, 2016
Detailed Description	2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switchi...
Datasheet	C2655 PDF File

Overview

2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.
0 μs (typ.
) • Complementary to 2SA1020.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 0.
5 A JEDEC TO-92MOD Collector power dissipation Junction temperature Storage temperature range PC 900 m...

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