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EN27LN2G08

EON
Part Number EN27LN2G08
Manufacturer EON
Description 3.3V NAND Flash Memory
Published Aug 23, 2016
Detailed Description EN27LN2G08_Preliminary EN27LN2G08 2 Gigabit (256M x 8), 3.3 V NAND Flash Memory Features • Voltage Supply: 2.7V ~ 3.6V ...
Datasheet PDF File EN27LN2G08 PDF File

EN27LN2G08
EN27LN2G08

Overview
EN27LN2G08_Preliminary EN27LN2G08 2 Gigabit (256M x 8), 3.
3 V NAND Flash Memory Features • Voltage Supply: 2.
7V ~ 3.
6V • Organization - Memory Cell Array : (256M + 16M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes • Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.
) - Serial Access : 25ns (Min.
) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 250µs (Typ.
) - Block Erase Time : 2ms (Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years • Command Register Operation • Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download • NOP: 4 cycles • Cache Program Operation for High Performance Program • Cache Read Operation • Copy-Back Operation - EDO mode - OTP Operation - Two-Plane Operation Ordering Information Product ID EN27LN2G08-25TCP EN27LN2G08-25TIP EN27LN2G08-25CECP EN27LN2G08-25CEIP Speed 25ns 25ns 25ns 25ns Package 48-pin TSOP 48-pin TSOP 63 ball FBGA 63 ball FBGA Comments Pb-free Pb-free Pb-free Pb-free This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
1 ©2011 Eon Silicon Solution, Inc.
, www.
eonssi.
com Rev.
Preliminary 0.
1, Issue Date: 2012/11/26 General Description EN27LN2G08_Preliminary The device is a 256Mx8bit with spare 16Mx8bit capacity.
The device is offered in 3.
3V VCC Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
The device contains 2048 blocks, composed by 64 pages consisting in two NAND s...


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