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EN27LN51208

EON
Part Number EN27LN51208
Manufacturer EON
Description 3.3V NAND Flash Memory
Published Aug 23, 2016
Detailed Description EN27LN51208 EN27LN51208 512 Megabit (64 M x 8) SLC, 3.3 V NAND Flash Memory 1. Features • Voltage Supply: 3.3V (2.7V ~ ...
Datasheet PDF File EN27LN51208 PDF File

EN27LN51208
EN27LN51208

Overview
EN27LN51208 EN27LN51208 512 Megabit (64 M x 8) SLC, 3.
3 V NAND Flash Memory 1.
Features • Voltage Supply: 3.
3V (2.
7V ~ 3.
6V ) • Organization x 8: - Memory Cell Array : (64M + 2M) x 8bit - Data Register : (2K + 64) x 8bit • Automatic Program and Erase x 8: - Page Program : (2K + 64) Byte - Block Erase : (128K + 4K) Byte • Page Read Operation - Page Size : (2K + 64) Byte (x 8) - Random Read : 25µs (Max.
) - Serial Access : 25ns (Min.
) • Memory Cell: 1bit/Memory Cell • Fast Write Cycle Time - Page Program Time : 300µs (Typ.
) - Block Erase Time : 3ms (Typ.
) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Flo...


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