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IRFB20N50K

Vishay
Part Number IRFB20N50K
Manufacturer Vishay
Description Power MOSFET
Published Aug 23, 2016
Detailed Description www.vishay.com IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT...
Datasheet PDF File IRFB20N50K PDF File

IRFB20N50K
IRFB20N50K

Overview
www.
vishay.
com IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max.
(nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 110 33 54 Single 0.
21 FEATURES • Low gate charge Qg results in simple drive requirement Available • Improved gate, avalanche, and dynamic dV/dt Available ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS(on) • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.
For example, parts with lead (Pb) terminations are not RoHS-compliant.
 Please see the information / tables in this datasheet for details APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRFB20N50KPbF SiHFB20N50K-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature b.
Starting TJ = 25 °C, L = 1.
6 mH, Rg = 25 , IAS = 20 A c.
ISD  20 A, dI/dt  350 A/μs, VDD  VDS, TJ  150 °C d.
1.
6 mm from case LIMIT 500 ± 30 20 12 80 2.
2 330 20 28 280 10 -55 to +150 300 10 UNIT V A W/°C mJ A mJ W V/ns °C N S22-0560-Rev.
F, 04-Jul-2022 1 Documen...


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