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CFY25-20

Siemens Semiconductor Group
Part Number CFY25-20
Manufacturer Siemens Semiconductor Group
Description GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
Published Mar 23, 2005
Detailed Description GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metalli...
Datasheet PDF File CFY25-20 PDF File

CFY25-20
CFY25-20

Overview
GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Package1) Micro-X Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Total power dissipation, TS ≤ 56 ˚C2) Channel temperature Storage temperature range Thermal Resistance Channel - soldering point2) Rth chS 375 K/W Symbol VDS VDG VGS ID Ptot Tch Tstg Values 5 7 –5…+0 80 250 150 – 65 … + 150 mA mW ˚C Unit V 1) 2) For detailed information see chapter Package Outlines.
TS is measured on the source lead at the soldering point to the pcb.
Semiconductor Group 1 07.
94 CFY 25 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Drain-source saturation current ...


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