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CFY66-08P

Infineon Technologies AG
Part Number CFY66-08P
Manufacturer Infineon Technologies AG
Description HiRel K-Band GaAs Super Low Noise HEMT
Published Mar 23, 2005
Detailed Description CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEM...
Datasheet PDF File CFY66-08P PDF File

CFY66-08P
CFY66-08P

Overview
CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67) For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec.
No.
: 5613/002, Type Variant No.
s 01 to 04 4 3 • • • • • 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D 4 S Package CFY66-08 (ql) CFY66-08P (ql) CFY66-10 (ql) CFY66-10P (ql) - see below G Micro-X CFY66-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 3.
5 4.
5 - 3.
.
.
+ 0.
5 60 2 + 10 150 - 65.
.
.
+ 150 200 230 Unit V V V mA mA dBm °C °C mW °C Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.
: Rth JS ≤ 515 (tbc.
) K/W 1) For VDS ≤ 2 V.
For VDS > 2 V, derating is required.
2) At TS = + 47 °C.
For TS > + 47 °C derating is required.
3) During 15 sec.
maximum.
The same terminal shall not be resoldered until 3 minutes have elapsed.
Semiconductor Group 2 of 8 Draft D, September 99 CFY66 Electrical Characteristics (at TA=25°C; unless otherwise specified) Parameter Symbol min.
Values typ.
max.
Unit DC Chara...


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