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4606

Tuofeng Semiconductor
Part Number 4606
Manufacturer Tuofeng Semiconductor
Description Complementary High-Density MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology co., LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Cha...
Datasheet PDF File 4606 PDF File

4606
4606

Overview
Shenzhen Tuofeng Semiconductor Technology co.
, LTD 4606 Complementary High Density Trench MOSFET PRODUCT SUMMARY (N-Channel) VDSS ID RDS(on) (m-ohm) Max 30V 6.
9A 28 @ VGS = 10 V,ID=6.
9A 42 @ VGS = 4.
5V,ID=5.
0A PRODUCT SUMMARY (P-Channel) VDSS ID RDS(on) (m-ohm) Max -30V -6.
0 A 50 @ VGS = -10V,ID=- 6.
0A 80@VGS = -4.
5V, ID=- 5.
0A Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter VDS VGS ID IDM Is PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Currenta Drain Currentb (Pulsed) *1 Drain-Source Diode Forward Current a Total Power Dissipationa @TA=25oC Total Power Dissipationa @TA=75oC Operating Junction and Storage Temperature Rangea Thermal Resistance Junction to Ambienta a: Surface Mounted on FR4 Board , t ≤ 5sec .
b: Pulse width limited by maximum junction temperature.
N-Channel P-Channel 30 -30 ±20 ±20 6.
9 - 6.
0 28 -26 2.
5 -2.
3 2.
0 2.
0 1.
2 1.
2 -55 to +150 -55 to +150 63.
2 63.
2 Units V V A A A W °C °C/W 1 Shenzhen Tuofeng Semiconductor Technology co.
, LTD 4606 N-Channel Electrical Characteristics(TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions Min.
• Off Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current • On Characteristicsc VGS(th) Gate Threshold Voltage RDS(on) Drain-Source On-State Resistance gfs Forward Transconductance • Dynamic Characteristics d Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance • Switching Characteristicsd Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VGS=0V, ID=250uA VDS=24V, VGS=0V VGS=±20V, VDS=0V VDS=VGS, ID=250uA VGS=10V, ID= 6.
9A VGS=4.
5V, ID= 5.
0A VDS=5V, ID= 5.
0A VDS=15V, VGS=0V, f=1MHz VDS=10V, ID=1A, VGS=10V VDD= 15V, RL=15Ω, ID=1A, VGEN=10V, RG=6Ω 30 - 1.
0 - - - • Drain-Source Diode Characteristics VSD Dr...


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