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SiA519

Tuofeng Semiconductor
Part Number SiA519
Manufacturer Tuofeng Semiconductor
Description N-&P-Channel MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd SiA519 N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) ...
Datasheet PDF File SiA519 PDF File

SiA519
SiA519

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SiA519 N- and P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.
040 at VGS = 4.
5 V N-Channel 20 0.
065 at VGS = 2.
5 V P-Channel 0.
090 at VGS = - 4.
5 V - 20 0.
137 at VGS = - 2.
5 V ID (A) Qg (Typ.
) 4.
2 3.
7 nC 3.
3 - 2.
9 - 2.
3 5.
3 nC 1 S1 2 G1 D1 3 D2 D1 6 D2 G2 5 2.
05 mm S2 4 2.
05 mm DFNWB2*2-6L-A D1 S2 G1 G2 S1 N-Channel MOSFET D2 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ± 12 Unit V Continuous Drain Current (TJ = 150 °C) TC = 25 °C Pulsed Drain Current Source Drain Current Diode Current TC = 25 °C Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TA = 25 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State ID IDM IS PD TJ, Tstg Symbol RthJA RthJC 4.
2 - 2.
9 15 - 15 4.
5 - 4.
5 7.
8 7.
8 1.
9 1.
9 - 55 to 150 260 N-Channel Typ.
Max.
52 65 12.
5 16 P-Channel Typ.
Max.
52 65 12.
5 16 A W °C Unit °C/W 1 Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SiA519 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA VGS = 0 V, ID = - 250 µA VDS Temperature Coefficient VDS/TJ ID = 250 µA ID = - 250 µA VGS(th) Temperature Coefficient VGS(th)/TJ ID = 250 µA ID = - 250 µA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA VDS = VGS, ID = - 250 µA Min.
Typ.
Max.
Unit N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 - 20 0.
6 - 0.
5 23 - 11 - 3.
3 2.
6 V mV/°C 1.
4 - 1.
3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V N-Ch P-Ch ± 0.
1 ± 0.
1 µA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V N-Ch 0.
1 VDS = - 20 V, VGS = 0 V P-Ch - 0.
1 On-State Drain ...


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