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SSS8N60

Tuofeng Semiconductor
Part Number SSS8N60
Manufacturer Tuofeng Semiconductor
Description N-CHANNEL MOSFET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS8N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS ID 7.5 A VDSS 600...
Datasheet PDF File SSS8N60 PDF File

SSS8N60
SSS8N60

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd SSS8N60 N N-CHANNEL MOSFET MAIN CHARACTERISTICS ID 7.
5 A VDSS 600 V Rdson（@Vgs=10V） 1.
2 Ω Qg 54 nC Package z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 23pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 23pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product F 1/7 Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd ABSOLUTE RATINGS (Tc=25℃) SSS8N60 Parameter － Drain-Source Voltage Symbol VDSS Value JCS8N60S/B/C JCS8N60F 600 600 Unit V Drain Current -continuous ID T=25℃ 7.
5 7.
5* A （ 1） Drain Current - pulse （note 1） IDM Gate-Source Voltage VGSS （ 2） Single Pulsed Avalanche Energy（note 2） EAS （ 1） Avalanche Current（note 1） IAR （ 1） Repetitive Avalanche Current（note 1） EAR （ 3） Peak Diode Recovery dv/dt（note 3） dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature TJ，TSTG Range Maximum Lead Temperature for TL Soldering Purposes * *Drain current limited by maximum junction temperature 28 28* ±30 420 7.
5 14.
7 5.
5 147 48 1.
18 0.
38 -55～+150 300 A V mJ A mJ V/ns W W/℃ ℃ ℃ 2/7 Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd ELECTRICAL CHARACTERISTICS Parameter Symbol Tests conditions Off –Characteristics － Drain-Source Voltage BVDSS ID=250μA, VGS=0V Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced TJ 25℃ SSS8N60 Min Typ Max Units 600 - - V to - 0.
65 - V/℃ Zero Gate Voltage Drain Current IDSS Gate-body leakage current, forward IGSSF Gate-body leakage current, reverse IGSSR On-Characteristics Gate Threshold Voltage VGS(th) Static Drain-Source On-Resistance RDS(ON) Forward Transconductance gfs Dynamic Characteristics Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS=600V,...


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