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XP152A12C0MR

Tuofeng Semiconductor
Part Number XP152A12C0MR
Manufacturer Tuofeng Semiconductor
Description Power MOS FET
Published Aug 28, 2016
Detailed Description Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3...
Datasheet PDF File XP152A12C0MR PDF File

XP152A12C0MR
XP152A12C0MR

Overview
Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.
3Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
Features Low on-state resistance : Rds (on) = 0.
3Ω ( Vgs = -4.
5V ) Rds (on) = 0.
5Ω ( Vgs = -2.
5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.
5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 P - Channel MOS FET ( 1 device built-in ) Pin Assignment PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain Absolute Maximum Ratings PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature SYMBOL Vdss Vgss Id I dp I dr Pd Tch Tstg ( note ) : When implemented on a ceramic PCB RATINGS -20 + 12 -0.
4 -2.
8 -0.
7 0.
5 150 -55 to 150 Ta=25OC UNITS V V A A A W OC OC Shenzhen Tuofeng Semiconductor Technology Co.
, Ltd Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf ( note ) : Effective during pulse test.
CONDITIONS Vds = - 20 , Vgs = 0V Vgs = ± 12 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 0.
4A , Vgs = - 4.
5V Id = - 0.
4A , Vg...


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